Wolfspeed Extends SiC Schottky Diode range

Wolfspeed Extends SiC Schottky Diode range »

New 650 V and 1200 V diodes enable high efficiency power conversion with improved reliability and total cost


Wolfspeed, a subsidiary of Cree, has added four new SiC Schottky diodes to its portfolio.

Developed in response to both individual customer requests and the power supply industry's continuous demand for components with larger nominal current ratings, the new 650 V and 1200 V Cree Z-Rec SiC Schottky diodes enable high efficiency power conversion systems with improved reliability, simplicity, and total cost.

According to the company, beneficial characteristics of the new SiC Schottky diodes include: zero reverse recovery current, zero forward recovery voltage, high frequency operation with low EMI, temperature-independent switching behaviour, extremely fast switching, reduced heat sink requirements, near-zero switching losses, and significantly higher efficiency, as well as industry-leading surge capabilities, as compared to analogous silicon diodes.

A positive temperature coefficient on VF also enables parallel devices without thermal runaway, and each of the four new diodes provides engineers with an attractive price/performance ratio when compared to competitive offerings.

The new 650 V 12 A C3D12065 A and 16 A C3D16065A Z-Rec SiC Schottky diodes are supplied in TO-220-2 packages, and are targeted at PFC boost stages in server power supplies, especially next-generation systems rated for 1100 W, 1600 W, 2000 W, and 2400 W with low-line or high-line inputs.

They're also available as bare die with part numbers: CPW2-06500S012B and CPW2-0650-S016B. The new 650 V 2x15 A C3D30065D Z-Rec diodes are supplied in TO-247-3 packages, and are best suited for rectification applications in 3-5kW power supplies. Also supplied in TO-247-3 packages, the new 1200V 2x7.5A C4D15120D Z-Rec diodes are suitable for use in PV inverters and on- and off-board chargers.

Additionally, as is the case with all C3D and C4D Schottky diodes from Cree, all four new diodes have a dV/dt rating of 200 V/ns. This high dV/dt rating makes the Schottky diodes suitable for pairing with both silicon IGBTs and SiC MOSFETs, enabling high-speed system optimisation while simultaneously maximising reliability, minimising dead time, and enabling greater resonant frequencies. 

All of the new Z-Rec SiC Schottky diodes are halogen-free, RoHS compliant, and REACH certified. 

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